The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
May. 24, 2000
Jin-Sheng Yang, Hsinchu, TW;
Tzung-Han Lee, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of defining a mask pattern for a photoresist layer in semiconductor fabrication. The method coats a photoresist layer containing an additive on a dielectric layer. The photoresist layer has an opening formed therein. The additive is 2,2′-azo-bis-isobutyronitride (AIBN) or phenyl-azo-triphenylmethane. The photoresist layer is exposed and developed. Then, a hard baking step is performed. A UV curing or a hot curing step is performed on the photoresist layer. As a result, the additive in the photoresist layer reacts to form nitrogen (N ) gas. Nitrogen gas makes the photoresist layer expand. The opening is decreased by the expansion of the photoresist layer. The dielectric layer is etched according to the expanded photoresist layer so that a via or a trench, which is smaller than a conventional one, is formed.