The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jun. 16, 2000
Helmut Horst Tews, Poughkeepsie, NY (US);
Jonathan E. Faltermeir, LaGrange, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Carol Heenan, LaGrangeville, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Other;
Abstract
A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate where silicon surfaces have at least two different crystallographic orientations of the silicon crystal. Atomic oxygen (O) is formed for oxidizing the surfaces. An oxide is formed on the surfaces by reacting the atomic oxygen with the surfaces to simultaneously form a substantially uniform thickness of the oxide on the surfaces.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile