The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Apr. 12, 2000
Applicant:
Inventors:
Dietmar Krueger, Frankfurt an der Oder, DE;
Rainer Kurps, Frankfurt an der Oder, DE;
Boris Romanjuk, Kiev, UA;
Viktor Melnik, Kiev, UA;
Jaroslav Olich, Kiev, UA;
Assignee:
Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH., Frankfurt an der Oder, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1266 ;
U.S. Cl.
CPC ...
H01L 2/1266 ;
Abstract
A method of fabricating ion implanted doping layers in semiconductor materials by subjecting the material to an ultrasonic treatment during the implantation of predetermined impurities. In an alternate embodiment ultrasonic vibrations are generated by primary ion currents of sufficient density reflected by a piezo-electric element applied to the semiconductor material.