The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jul. 28, 1998
Charles Dornfest, Fremont, CA (US);
John Egermeier, San Jose, CA (US);
Nitin Khurana, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.