The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jun. 06, 2000
Sailesh Chittipeddi, Allentown, PA (US);
Arun Kumar Nanda, Orlando, FL (US);
Ankineedu Velaga, Orlando, FL (US);
Lucent Technologies, Inc., Murray Hill, NJ (US);
Abstract
A method for forming a shallow trench isolation structure within a semiconductor substrate includes forming a trench opening within a semiconductor substrate having an oxidation-resistant material as a top surface. An oxide liner is formed on inner surfaces of the trench opening. A silicon material is then introduced into the trench opening and over the top surface. The silicon material is subsequently oxidized, either before or after a polishing operation is used to planarize the structure. Dishing related problems are avoided during polishing because the silicon or oxidized silicon material has a polishing rate similar to the oxidation resistant material, and less than that of conventionally formed CVD oxides.