The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
May. 07, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method for forming a shallow trench isolation is disclosed. The method avoids using any silicon nitride material to prevent the kooi effect and use spacers to protect the corner portions of the STI. A conductive layer is used to replace the conventional used silicon nitride layer in the formation of conventional STI regions. The invention also uses a dielectric layer comprising a pad oxide layer as a sacrificial oxide layer so that an additional sacrificial oxide layer is no longer needed. The conductive layer will be oxidized together with the substrate in the formation of the gate oxide layer so that the isolation quality will not be degraded.