The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Jun. 02, 1999
Cheng-Hung Chien, Yung-Ho, TW;
Chih-Hua Lee, Taoyuan, TW;
Abstract
A CMOS sensor. The CMOS sensor comprises a substrate, a gate electrode formed on the substrate, a source/drain region formed in the substrate on one side of the gate electrode, and a sensor region formed in the substrate on another side of the gate electrode. The impurity in the source/drain region is arsenic. The source/drain further comprises a lightly doped drain region. The sensor region comprises a first doped region and a second doped region which together have a dentoid profile. The impurity in the first doped region and the second doped region is phosphorus.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile