The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Dec. 17, 1999
Naoki Kasai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The method of manufacturing a semiconductor device having a first and second semiconductor element formation regions. The second gate electrode is of a second semiconductor element formation region while the first semiconductor element formation region is masked. The second source/drain region is a of the second semiconductor element and is formed in the second semiconductor element formation region while the first semiconductor element formation region is masked. The second sidewall insulating film are formed on side portions of the second gate electrode while the first semiconductor element formation regions is masked. The first gate electrode is of a first semiconductor element and is formed in the first semiconductor element formation region while the second semiconductor element formation region is masked. The first source/drain region is of the first semiconductor element and is formed in the first semiconductor element formation region while the second semiconductor element formation region is masked. The first sidewall insulating films is formed on side portions of the first gate electrode.