The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Dec. 14, 1999
Applicant:
Inventors:
Isaac Mazor, Haifa, IL;
Long Vu, Round Rock, TX (US);
Assignee:
Jordan Valley Applied Radiation Ltd., Migdal Haemek, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/3223 ;
U.S. Cl.
CPC ...
G01N 2/3223 ;
Abstract
A method for testing the deposition and/or the removal of a material within a recess on the surface of a sample. An excitation beam is directed onto a region of the sample in a vicinity of the recess, and an intensity of X-ray fluorescence, emitted from the region in a spectral range in which the material is known to fluoresce, is measured. A quantity of the material that is deposited within the recess is determined responsive to the measured intensity.
Mazor, Isaac. (2002). Detection of voids in semiconductor wafer processing (U.S. Patent No. 6351516). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6351516
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile