The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
May. 10, 1999
Hiroshi Mori, Atsugi, JP;
Yasuhiro Kanaya, Isehara, JP;
Yasuaki Nagashima, Atsugi, JP;
Tomoyuki Kikugawa, Atsugi, JP;
Yoshinori Nakano, Yokohama, JP;
Anritsu Corporation, Tokyo, JP;
Abstract
Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer and p-type cladding layer on an n-type semiconductor substrate. The concentration distribution of a p-type dopant from the active layer to the p-type cladding layer has a maximum value at a distance of 50 to 250 nm from the end of the active layer.