The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Feb. 10, 2000
Yasumori Fukushima, Sakurai, JP;
Tsutomu Ashida, Yamatokooriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a quantum thin line producing method capable of forming a quantum thin line that has good surface flatness of silicon even after formation of quantum thin line and a complete electron confining region with good controllability as well as a semiconductor device employing the quantum thin line. A region of a nitride film which covers a semiconductor substrate on which a stepped portion is formed is etched back with masking, consequently exposing an upper portion of a semiconductor substrate . Next, an oxide film is formed by oxidizing the exposed portion of the upper portion of the semiconductor substrate , and a linear protruding portion is formed on the semiconductor substrate along a side surface of the nitride film . Next, the oxide film on the protruding portion is partially etched to expose a tip of the protruding portion . Next, a thin line portion is made to epitaxially grow on the exposed portion at the tip of the protruding portion . Then, after removing the nitride film and the oxide film , there is formed a quantum thin line that is insulated and isolated from the semiconductor substrate by an oxide film A formed through oxidation of the semiconductor substrate