The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Apr. 25, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
First of all, a semiconductor substrate that has a pad oxide layer thereon is provided. Then a nitride layer is formed on the pad oxide layer. Next, a photoresist layer is formed and defined on the nitride layer. Afterward, performing a residual etching process to etch the nitride layer to form an opening and a convex remainder of the nitride layer. The convex remainder of the nitride layer and the semiconductor substrate are then etched by way of using a top rounding process to form the rounding corners on the semiconductor substrate. Subsequently, performing a process for forming the trench to form a trench with the rounding corners. Finally, the follow-up processes are performed to form the shallow trench isolation.