The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Sep. 17, 1999
Michael K. Templeton, Atherton, CA (US);
Kathleen R. Early, Santa Clara, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In one embodiment, the present invention relates to a method of forming a thin photoresist layer having a low defect density, involving the steps of depositing a photoresist layer having a thickness from greater than about 0.5 &mgr;m to about 2 &mgr;m on a semiconductor substrate; and removing at least a portion of the photoresist layer to provide the thin photoresist layer having the low defect density and a thickness from about 0.1 &mgr;m to about 0.5 &mgr;m. In another embodiment, the present invention relates to a method of reducing pinhole defects in a thin photoresist layer having a thickness below about 0.5 &mgr;m comprising a photoresist material, involving the steps of depositing a layer of the photoresist material having a thickness greater than about 0.5 &mgr;m; and etching at least a portion of the photoresist material to provide the thin photoresist layer having the thickness below about 0.5 &mgr;m, wherein the thickness of the thin photoresist layer is about 90% or less than the thickness of the layer of the photoresist material.