The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Mar. 16, 2000
Takashi Kawanoue, Yokohama, JP;
Tetsuo Matsuda, Tano-gun, JP;
Hisashi Kaneko, Fujisawa, JP;
Tadashi Iijima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A groove or hole is formed in an insulating layer formed on a semiconductor substrate, and a first conductive layer including a first metal element is formed on a surface of the insulating layer. By oxidizing the first conductive layer, an oxide layer of the first metal element is formed on a surface of the first conductive layer. A second conductive layer including a second metal element having a free energy of oxide formation lower than that of the first metal element is deposited thereon. By reducing the oxide layer of the first metal element by the second metal element, an oxide layer of the second metal element is formed at the interface between the first conductive layer and the second conductive layer. Further, an interconnection is buried in the groove or hole of the insulating layer. Thereby, a thin second metal oxide layer having excellent barrier properties against an interconnection material and excellent adhesion to the interconnection material can be selectively formed with a uniform thickness on the surface of the first conductive layer used as a barrier metal layer of the interconnection.