The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Oct. 27, 1999
Applicant:
Inventor:
Chih-Yung Lin, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/40 ;
U.S. Cl.
CPC ...
G03F 7/40 ;
Abstract
A method of lowering critical dimensions. A film layer and a photoresist layer are sequentially formed over a substrate. The photoresist layer is exposed and developed to form a plurality of first openings. A first baking of the photoresist layer is carried out, permitting the photoresist layer to flow. A second baking is next carried out so that the width of the first openings is reduced linearly with time until a desired dimension is reached. Using the photoresist layer as a mask, the film layer is etched to form a plurality of second openings.