The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Sep. 25, 2000
Yoshio Murakami, Tokyo, JP;
Mitsubishi Materials Silicon Corporation, Tokyo, JP;
Abstract
The present invention provides a silicon wafer free of vacancy agglomerates and interstitial agglomerate; wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm or more of a p-n junction portion when the p-n junction portion is formed on the surface of the wafer. The present silicon wafer is capable of achieving a higher performance, higher yield and uniformity of characteristics of semiconductor devices comparable to a wafer provided with a pure epitaxial layer, without deteriorating the gettering ability of the silicon wafer.