The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2002

Filed:

Dec. 04, 1998
Applicant:
Inventors:

Takeshi Nogami, Sunnyvale, CA (US);

Susan H. Chen, Santa Clara, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract

A combined interconnect system is formed comprising a Cu or Cu alloy feature electrically connected an Al or Al alloy feature through a composite comprising a first layer containing tantalum and aluminum contacting the Al or Al alloy feature, a second layer containing tantalum nitride, a third layer containing tantalum nitride having an nitrogen content less than that of the second layer, e.g. amorphous tantalum nitride, and a fourth layer comprising tantalum or tantalum nitride having a nitrogen content less than that of the third layer. Embodiments include forming a dual damascene opening in the dielectric layer exposing a lower Al or Al alloy feature, depositing a layer of tantalum in contact with the Al or Al alloy feature, sequentially depositing the second, third and fourth layers, filling the opening with Cu or Cu alloy layer, CMP and heating to diffuse aluminum from the underlying feature into the first tantalum layer.


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