The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2002

Filed:

May. 22, 1998
Applicant:
Inventors:

Yueh Yale Ma, Los Altos Hills, CA (US);

Takahiro Fukumoto, Sunnyvale, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract

A contact-less array of self-aligned, triple polysilicon, source side injection, nonvolatile memory cells with metal-overlaid wordlines includes: a plurality of pairs of stacks of first, second and third layer polysilicon arrange in rows; a drain region between the two stacks in each pair of polysilicon stacks, the drain regions being self-aligned to the edges of the two stacks; and a source region between each of the two adjacent pairs of polysilicon stacks, the source regions being self-aligned to side-wall spacers formed adjacent to edges of the polysilicon stacks such that each source region is laterally spaced an equal distance from the edges of the two stacks of polysilicon between which the source region is located.


Find Patent Forward Citations

Ma, Yueh. (2002). Contact-less array of fully self-aligned, triple polysilicon, source-side injection, nonvolatile memory cells with metal-overlaid wordlines (U.S. Patent No. 6346725). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6346725

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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