Process to provide enhanced resistance to cracking and to further reduce the dielectric constant of a low dielectric constant dielectric film of an integrated circuit structure by implantation with hydrogen ions

Abstract

A film of low k dielectric material formed on a semiconductor substrate is treated to inhibit cracking of the film of low k dielectric material during subsequent exposure of the film of low k dielectric material to elevated temperatures by implanting the film of low k dielectric material with hydrogen ions by applying a negative DC bias to the semiconductor substrate in the presence of a plasma of hydrogen ions. The semiconductor substrate is mounted on an electrically conductive substrate support in a reactor and the negative DC bias is applied to the semiconductor substrate by connecting the electrically conductive substrate support to a source of negative DC bias while hydrogen ions are generated by the plasma in the reactor to thereby cause the hydrogen ions to implant into the film of low k dielectric material on the semiconductor substrate.