The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Oct. 21, 1998
Junko Matsumoto, Tokyo, JP;
Shigenori Sakamori, Tokyo, JP;
Akemi Teratani, Tokyo, JP;
Yoshihiro Kusumi, Tokyo, JP;
Tetsuhiro Fukao, Tokyo, JP;
Kazuyuki Ohmi, Tokyo, JP;
Kanji Tabaru, Tokyo, JP;
Nobuaki Yamanaka, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
There is described formation of a contact hole without involvement of damage to an etching stopper film and deterioration of electric characteristics, achieved by means of a self-alignment method. An interlayer oxide film is etched through an opening of a resist mask, and by means of plasma etching through use of a processing gas comprising a mixture of a rare gas and a CF-based gas, thereby tapering a shoulder of the silicon nitride film. Alternatively, a silicon oxide film and a silicon nitride film are continually etched through an opening of the resist mask, by means of plasma etching through use of a CH F gas added to a mixed gas including a rare gas and a C F gas.