The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Feb. 02, 2000
Alexander Y Usenko, Murray Hill, NJ (US);
William N. Carr, Montclair, NJ (US);
Silicon Wafer Technologies, Inc., Newark, NJ (US);
Abstract
The method of the invention causes fracture of a semiconductor layer containing semiconductor devices from a support layer and requires no masking of the semiconductor device features during an implantation action. The method initially implants protons throughout an entirety of the semiconductor layer at an energy level that enables the protons to reach a depth that defines a delamination region. The implanting creating defects in the semiconductor devices and charge accumulation in dielectric portions (if any). Next a heat treating step causes a delamination of the semiconductor layer from the support layer that lies beneath the delamination region. Then the semiconductor layer is annealed at a temperature that exceeds a thermal stability temperature of the defects to cause a healing thereof.