The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Nov. 17, 2000
Applicant:
Inventor:
Shih-Ying Hsu, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A dual gate oxides' process for mixed-mode IC is provided. More particularly, the present invention relates to a dual gate oxides' process for mixed-mode IC, which protects and improves the dual gate oxides' quality.
Hsu, Shih-Ying. (2002). Method for fabricating semiconductor devices with dual gate oxides (U.S. Patent No. 6346445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6346445
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile