The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Mar. 19, 1999
Applicant:
Inventor:
Chen-Chung Hsu, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of fabricating a flash memory cell is described. The present invention forms the flash memory cell comprising an asymmetric source/drain region with tilt implantation. By the tilt implantation, a lightly doped region can be formed under a spacer before the formation of the spacer, or after the formation of the spacer. A photo-mask procedure thus does not need in the invention for forming the lightly doped source region. The fabrication process is simplified and the fabrication cost is also reduced.