The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Nov. 20, 1998
Applicant:
Inventors:
Koji Kishimoto, Tokyo, JP;
Kenichi Koyanagi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 ; H01L 2/1316 ;
U.S. Cl.
CPC ...
H05H 1/24 ; H01L 2/1316 ;
Abstract
A high density plasma enhanced chemical vapor deposition method for depositing an insulating film such as a silicon oxide film on a silicon substrate includes at least both a first deposition period during which a first power having a first frequency is applied to the silicon substrate and a second deposition period during which a second power having a second frequency which is lower than the first frequency is applied to the silicon substrate to keep an underlying Si/SiO interface free from an interface state, where said underlying Si/SiO interface has already been formed under said insulating film.