The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Aug. 03, 2000
Amanda Baer, Campbell, CA (US);
Richard Hsiao, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Clinton David Snyder, Los Gatos, CA (US);
Hong Xu, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A fabrication method using a bottom anti-reflective coating (BARC) eliminating deleterious effects of unwanted reflected light during the photo exposure step of a photolithographic process. The BARC coating comprises a carbon coating having a thickness of 300 angstroms, deposited by a carbon ion beam deposition tool, and an initial silicon BARC coating layer having thickness of 20 angstroms deposited before the carbon coating. Where the BARC layer is utilized in a photolithographic NiFe pole tip fabrication process, a NiFe seed layer is first deposited upon a substrate. The BARC layer is then formed on the NiFe seed layer and the pole tip trench is then photolithographically created. Thereafter, the BARC layer is removed from the bottom of the trench, utilizing a reactive ion etch process, exposing the NiFe seed layer. The NiFe pole tip is then fabricated into the trench, and any remaining photoresist and BARC layer are removed.