The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2002
Filed:
Dec. 12, 2000
Patrick A. Van Cleemput, Sunnyvale, CA (US);
Ravi Kumar Laxman, San Jose, CA (US);
Jen Shu, Saratoga, CA (US);
Michelle T. Schulberg, Palo Alto, CA (US);
Bunsen Nie, Fremont, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO with O or CO with C H OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.