The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Dec. 20, 1999
Akiko Nomachi, Yokohama, JP;
Hiroshi Takato, Yokohama, JP;
Tadaomi Sakurai, Yokohama, JP;
Hiroshi Naruse, Yokohama, JP;
Koichi Kokubun, Yokohama, JP;
Hideaki Harakawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a MOS transistor of an LDD structure, a cobalt silicide film is formed in a region where adjacent gates are formed widely apart from each other, but is not formed in a region where adjacent gates are formed close to each other. The particular construction permits suppressing the leak current through the PN junction that is generated under the influence of the metal silicide compound in the region where adjacent gates are formed close to each other, and also permits ensuring the signal processing at a high speed in the region where adjacent gates are formed widely apart from each other.