The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Jun. 30, 2000
Applicant:
Inventors:
Tom Torack, Oakland, MO (US);
Michael John Ries, St. Charles, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
An apparatus and method are provided for forming a denuded zone and an epitaxial layer on a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one chamber. The apparatus includes a plurality of upstanding pins immovably mounted on a susceptor and maintain a semiconductor wafer spaced from the susceptor during both application of the epitaxial layer and formation of the denuded zone. Fast cooling of the wafer is accomplished by having the wafer out of conductive heat transfer relation with the susceptor during cooling thereof.