The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2002

Filed:

Apr. 15, 1998
Applicant:
Inventors:

Michael W. Hayes, San Jose, CA (US);

Mark R. Holst, Concord, CA (US);

Jose I. Arno, Brookfield, CT (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; B01D 5/334 ;
U.S. Cl.
CPC ...
C23C 1/600 ; B01D 5/334 ;
Abstract

An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.


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