The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Dec. 20, 1999
Applicant:
Inventor:
Hideshi Nishikawa, Saga, JP;
Assignee:
Sumitomo Metal Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ; H01L 2/144 ;
U.S. Cl.
CPC ...
G01R 3/126 ; H01L 2/144 ;
Abstract
A method of manufacturing a silicon single crystal to be grown by the Czochralski method, wherein a crystal is pulled up in a CZ furnace by changing an average pulling rate for a crystal, having a predetermined length, a plurality of times, a relation between the average pulling rate and the OSF ring diameter for each pulling length is examined, an average pulling rate pattern for generation or disappearance of an OSF ring at a predetermined position is designed based on the examined results, and the single crystal is grown according to the average pulling rate pattern, and a silicon wafer not having grown-in defects is manufactured.