The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2002

Filed:

Apr. 20, 1999
Applicant:
Inventors:

Takeshi Mori, Hyogo, JP;

Yoshihiko Toyoda, Hyogo, JP;

Tetsuo Fukada, Hyogo, JP;

Yoshiyuki Kitazawa, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ;
Abstract

A semiconductor device capable of preventing diffusion of a particle of copper or the like which forms a conductive layer is provided without any increase in the number of manufacturing the steps. Further, a semiconductor device preventing diffusion of a particle forming a conductive layer into an insulating layer even when a width of the conductive layer is increased is provided. The semiconductor device includes: an insulating layer a barrier layer a conductive layer a barrier layer having an opening an insulating layer having a through hole exposing a surface of conductive layer and a part of a surface of barrier layer a barrier layer formed on a surface of said through hole and insulating layer which is in contact with an upper surface of barrier layer and a conductive layer filling opening and through hole


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