The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Jan. 06, 1999
Yeong-kwan Kim, Seongnam, KR;
In-seon Park, Seoul, KR;
Sang-min Lee, Seoul, KR;
Chang-soo Park, Sueon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, are provided. The capacitor includes a storage node, an amorphous Al O dielectric layer, and a plate node. The amorphous Al O layer is formed by a method in which reactive vapor phase materials are supplied on the storage node, for example, an atomic layered deposition method. Also, the storage node is processed by rapid thermal nitridation before forming the amorphous Al O layer. The amorphous Al O layer is densified by annealing at approximately 850° C. after forming a plate node, to thereby realize the equivalent thickness of an oxide layer which approximates a theoretical value of 30 Å.