The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Apr. 30, 1999
Hidetaka Natsume, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An SRAM cell is arranged in a semiconductor device. A metal oxide semiconductor field effect transistor is arranged in the SRAM cell. An interlayer insulating film is formed on the metal oxide semiconductor field effect transistor. A load resistor conductive layer is formed on the interlayer insulating film. In addition, a wiring conductive layer which connects the gate electrode of the metal oxide semiconductor field effect transistor to the load resistor conductive layer is provided. The resistance of the wiring conductive layer is lower than the resistance of the load resistor conductive layer. A side wall is formed between the load resistor conductive layer and the wiring conductive layer.