The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Dec. 21, 1999
Applicant:
Inventors:
Fumitomo Matsuoka, Kawasaki, JP;
Minoru Takahashi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/994 ; H01L 3/1113 ;
Abstract
A semiconductor device where an interface circuit operating on a high power supply voltage and exchanging signals and data with an external device and an internal circuit operating on a low power supply voltage are integrated in a single chip. The interface circuit includes a transistor whose gate insulating film is made of SiO,. The internal circuit includes a transistor whose gate insulating film is made of an oxynitride film of nitrogen-added SiO,. Boron or BF,has been introduced into the gate electrodes of the p-channel transistors among those whose gate insulating films have been made of an oxynitride film.