The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Mar. 21, 2000
Applicant:
Inventors:
John M. Aitken, South Burlington, VT (US);
Alvin W. Strong, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A planarized interleaved capacitor for use with a substrate. The capacitor has a plurality of planarized metal layers formed above the substrate, at least one dielectric layer disposed between the plurality of planarized metal layers, and at least one insulator layer disposed over one of the plurality of metal layers.
Aitken, John. (2001). Processes for reduced topography capacitors (U.S. Patent No. 6333239). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6333239
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile