The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Oct. 04, 1999
Jun Liu, West Richland, WA (US);
Karel Domansky, Cambridge, MA (US);
Xiaohong Li, Richland, WA (US);
Glen E. Fryxell, Kennewick, WA (US);
Suresh Baskaran, Kennewick, WA (US);
Nathan J. Kohler, Richland, WA (US);
Suntharampillai Thevuthasan, Kennewick, WA (US);
Christopher A. Coyle, Richland, WA (US);
Jerome C. Birnbaum, Richland, WA (US);
Battelle Memorial Institute, Richland, WA (US);
Abstract
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant.