The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2001

Filed:

May. 14, 1999
Applicant:
Inventors:

Ivan Herman Murzin, Garland, TX (US);

Jeffrey Ned Miller, Dallas, TX (US);

Ajay Tapiawala, Garland, TX (US);

Assignee:

Ball Semiconductor, Inc., Allen, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ;
U.S. Cl.
CPC ...
C23C 1/600 ;
Abstract

A method and system for chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method performs chemical vapor deposition of a metal layer such as aluminum or copper upon the semiconductor spherical substrate by using a reactor made of a material such as quartz. The semiconductor spherical substrate moves and spins through the reactor where it is heated by a frequency heater such as an infrared heater. The heater utilizes infrared power source operating at a wavelength between 1 and 3 microns where the power is substantially absorbed by the semiconductor spherical substrate and is substantially transmitted by the quartz.


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