The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
May. 08, 1995
Applicant:
Inventors:
Masamichi Azuma, Colorado Springs, CO (US);
Carlos A. Paz De Araujo, Colorado Springs, CO (US);
Michael C. Scott, #K305, Colorado Springs, CO (US);
Toshiyuki Ueda, Nara-city, Nara, 630, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 ;
U.S. Cl.
CPC ...
H01G 4/06 ;
Abstract
A silicon nitride barrier layer is deposited on a gallium arsenide substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the barrier layer. A first electrode is formed on the stress reduction layer, then a liquid precursor is spun on the first electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A second electrode is deposited on the dielectric and annealed.