The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Sep. 08, 2000
Applicant:
Inventors:
Naoharu Sugiyama, Kanagawa-ken, JP;
Tomohisa Mizuno, Kanagawa-ken, JP;
Shinichi Takagi, Kanagawa-ken, JP;
Atsushi Kurobe, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
The invention is intended to form, on an insulating layer, a thin SiGe layer serving as an underlying layer for obtaining a strained silicon layer, and to provide a satisfactory strained Si layer. A SiGe layer,is formed on a Si substrate,and an oxygen ion implantation is effected with ensuring the detainment within the layer thickness of the SiGe layer,. The SiGe layer,is lattice-relaxed by a heat treatment and a buried insulating layer,is formed simultaneously in the SiGe layer,. A strained Si layer,is re-grown on the lattice-relaxed SiGe layer