The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Sep. 21, 1999
National Science Council, , TW;
Abstract
Disclosed is a method for manufacturing a metal oxide semiconductor FET (MOSFET), which utilizes a low-temperature liquid phase oxidation for III-V group. The method includes the steps of (a) providing a substrate, (b) forming an epitaxial layer on the substrate, (c) defining and forming a drain and a source on a portion of the epitaxial layer, (d) forming a recess in an another portion of the epitaxial layer, (e) forming an oxide layer on a surface of the recess by relatively low-temperature oxidation, and (f) forming a gate on a portion of the oxide layer between the drain and source. In addition, the method further includes two selective procedures, that is, a synchronic sulfurated passivation process which can be performed with the growth of the oxide film simultaneously, and a rapid thermal annealing (RTA) process.