The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Aug. 10, 1999
Applicant:
Inventors:
King-Lung Wu, Chia-Li Chen, TW;
Chuan-Fu Wang, San-Chung, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method for forming a capacitor in DRAM is disclosed. The method includes: providing a conductor defined on a first dielectric layer; forming a second dielectric layer on the conductor; then forming a polysilicon layer on the second dielectric layer, the polysilicon layer serves as an etching mask; next, etching the second dielectric layer; removing said polysilicon layer; etching said conductor; and finally removing said second dielectric layer.