The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Jan. 08, 1999
Applicant:
Inventors:
Michael J. Hargrove, Clinton Corners, NY (US);
Mario M. Pelella, Gainesville, FL (US);
Steven H. Voldman, South Burlingbon, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A SOI field effect transistor structure providing ESD protection. The structure has a source, a drain, a body, and a gate. The gate is formed from a thick oxide layer and a metal contact. The gate is formed during the BEOL process. The transistor may be a p-type transistor or an n-type transistor. The transistor may have its drain tied to either the gate, the body, or both the gate and body. When used as a protection device, the drain is tied to a signal pad and the source is tied to a potential reference.