The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Mar. 29, 1999
Applicant:
Inventors:
Wen-Pin Chang, Hsinchu, TW;
Wen-Wha Lu, Hsinchu, TW;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 ;
U.S. Cl.
CPC ...
G03F 7/00 ;
Abstract
A method of planarizing a photoresist coating for a semiconductor device having a plurality of trenches including providing a first layer of photoresist over the plurality of trenches wherein the layer has a thickness and the photoresist is a positive-type photoresist, exposing the first layer to light having a predetermined energy, developing the exposed first layer wherein a portion of the first layer remains within the plurality of trenches, and providing a second layer of photoresist over the developed first layer.