The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Jul. 16, 1998
Padmapani Nallan, Sunnyvale, CA (US);
Jeffrey Chinn, Foster City, CA (US);
Stephen Yuen, Santa Clara, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method of etching a silicon-containing layer,on a substrate,comprises the steps of placing the substrate,on a support,in a process chamber,. The substrate,is exposed to an energized process gas comprising a bromine-containing gas, a chlorine-containing gas, an inorganic fluorinated gas, and an oxygen gas. The volumetric flow ratio of the gas constituents is selected so that the energized process gas etches regions,having different concentrations of dopant in the polysilicon layer,at substantially the same etching rate. Optionally, the gas composition is also tailored to simultaneously clean off etch residue from the internal surfaces of a process chamber,during etching of the substrate