The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Aug. 06, 1997
Kiyoshi Nikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Laser beam,having an irradiation power not less than 1 mW is irradiated onto an observed region, and a variation in a power source current,is detected. When the laser beam,is irradiated onto a parasitic insulating film,which is a parasitic MIM structural spot, the current,increases due to a temperature characteristic of the current,flowing through the parasitic insulating film,, whereby the portion of the parasitic MIM structure can be detected. Moreover, laser beam,having a wavelength not less than 1.0 &mgr;m is irradiated onto an observed region from the back surface of the chip, and a variation in the power source current is detected. Light having a wavelength not less than 1.0 &mgr;m has the ability to travel through a Si substrate,so that the laser beam reaches a wiring portion. Irradiation of the laser beam onto the parasitic insulating film,having the parasitic MIM structure increases the current, so that the portion of the parasitic MIM structure can be detected.