The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2001

Filed:

May. 22, 2000
Applicant:
Inventors:

Bruno Vajana, Bergamo, IT;

Carlo Cremonesi, Vaprio d'Adda, IT;

Roberta Bottini, Lissone, IT;

Giovanna Dalla Libera, Monza, IT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ; H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/18247 ; H01L 2/9788 ;
Abstract

A memory cell of the EEPROM type formed on a semiconductor material substrate having a first conductivity type includes a drain region having a second conductivity type and extending at one side of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region. The region of electric continuity is produced by implantation at a predetermined angle of inclination.


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