The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Oct. 14, 1998
Hiroyuki Akatsu, Yorktown Heights, NY (US);
Tze-Chiang Chen, Yorktown Heights, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Richard Kleinhenz, Wappingers Falls, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A shallow trench isolation structure for a semiconductor device and the method for manufacturing the shallow trench isolation device within a semiconductor substrate. The shallow trench isolation structure is divot-free and includes un-annealed dielectric material as the trench fill material. The intersection of the structure and the semiconductor surface in which it is formed, is free of silicon nitride, but the isolation structure may include a silicon nitride liner which is within the trench and recessed below the semiconductor surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile