The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Jul. 15, 1999
Applicant:
Inventors:
Jamal Ramdani, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (,) having a surface (,); forming amorphous silicon dioxide (,) on the surface (,) of the silicon substrate (,); providing a metal oxide (,) on the amorphous silicon dioxide (,); heating the semiconductor structure to form an interface comprising a seed layer (,) adjacent the surface (,) of the silicon substrate (,); and forming one or more layers of a high dielectric constant oxide (,) on the seed layer (,).