The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
May. 05, 2000
Myoung Soo Kim, Kyoungki-do, KR;
Jae Chang Jung, Kyoungki-do, KR;
Hyung Gi Kim, Kyoungki-do, KR;
Ki Ho Baik, Kyoungki-do, KR;
Hyundai Electronics Industries, Kyoungki-Do, KR;
Abstract
The present invention relates to a process for forming a photoresist pattern by employing a silylation process, and particularly to a method for forming a photoresist pattern according to a top surface imaging (TSI) process using a photoresist composition comprising a cross-linker having a cross-linker monomer of the following Chemical Formula 1 or 2. The photoresist composition containing a polymer of the above cross-linker monomer is preferably used in a TSI process which has been optimized by controlling the conditions of each step, such as temperature and time, thereby obtaining an ultrafine pattern that can be more efficiently applied to a 4 G or 16 G DRAM semiconductor fabrication process: