The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Apr. 05, 1999
Applicant:
Inventors:
Kwang-Ming Lin, Hsinchu, TW;
Tzu-Min Peng, Chupei, TW;
Chieh-Te Chen, Kaohsiung, TW;
Pang-Miao Liu, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of fabricating a node contact opening is described. A dielectric layer is formed on a substrate. A first conductive layer is formed on the dielectric layer. The first conductive layer is etched to form a trapezoidally cross-sectioned opening exposing a portion of the dielectric layer. The dielectric layer exposed by the trapezoidally cross-sectioned opening is etched to form a node contact opening in the dielectric layer exposing a part the substrate. A second conductive layer is formed to fill the node contact opening and in contact with the conductive layer.